GQGF Electronics
EnglishEnglish
USD
STW26NM50 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STW26NM50

N-Channel 500 V 30A (Tc) 313W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW26NM50
DescriptionN-Channel 500 V 30A (Tc) 313W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 11.34USD 11.34
10USD 10.9431USD 109.431
25USD 10.5462USD 263.655
100USD 10.1493USD 1,014.93
250USD 9.7524USD 2,438.10
500USD 9.3555USD 4,677.75
1,000USD 8.9586USD 8,958.60
  • Product Attributes
  • Ordering Notes

N-Channel 500 V 30A (Tc) 313W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™
PackageTube
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs120mOhm @ 13A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V
FET Feature-
Power Dissipation (Max)313W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW26
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7