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STW38N65M5-4 STMicroelectronics

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STMicroelectronics

STW38N65M5-4

N-Channel 650 V 30A (Tc) 190W (Tc) Through Hole TO-247-4

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW38N65M5-4
DescriptionN-Channel 650 V 30A (Tc) 190W (Tc) Through Hole TO-247-4
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 7.91USD 7.91
10USD 7.63315USD 76.3315
25USD 7.3563USD 183.9075
100USD 7.07945USD 707.945
250USD 6.8026USD 1,700.65
500USD 6.52575USD 3,262.875
1,000USD 6.2489USD 6,248.90
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 30A (Tc) 190W (Tc) Through Hole TO-247-4

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ M5
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 100 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
Base Product NumberSTW38
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