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STW3N170 STMicroelectronics

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STMicroelectronics

STW3N170

N-Channel 1700 V 2.6A (Tc) 160mW Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW3N170
DescriptionN-Channel 1700 V 2.6A (Tc) 160mW Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.65USD 5.65
10USD 5.45225USD 54.5225
25USD 5.2545USD 131.3625
100USD 5.05675USD 505.675
250USD 4.859USD 1,214.75
500USD 4.66125USD 2,330.625
1,000USD 4.4635USD 4,463.50
  • Product Attributes
  • Ordering Notes

N-Channel 1700 V 2.6A (Tc) 160mW Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesPowerMESH™
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1700 V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 100 V
FET Feature-
Power Dissipation (Max)160mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW3N170
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