GQGF Electronics
EnglishEnglish
USD
STW42N65M5 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STW42N65M5

N-Channel 650 V 33A (Tc) 190W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW42N65M5
DescriptionN-Channel 650 V 33A (Tc) 190W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 11.09USD 11.09
10USD 10.70185USD 107.0185
25USD 10.3137USD 257.8425
100USD 9.92555USD 992.555
250USD 9.5374USD 2,384.35
500USD 9.14925USD 4,574.625
1,000USD 8.7611USD 8,761.10
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 33A (Tc) 190W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ V
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs79mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4650 pF @ 100 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW42
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7