GQGF Electronics
EnglishEnglish
USD
STW4N150 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STW4N150

N-Channel 1500 V 4A (Tc) 160W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW4N150
DescriptionN-Channel 1500 V 4A (Tc) 160W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 8.75USD 8.75
10USD 8.44375USD 84.4375
25USD 8.1375USD 203.4375
100USD 7.83125USD 783.125
250USD 7.525USD 1,881.25
500USD 7.21875USD 3,609.375
1,000USD 6.9125USD 6,912.50
  • Product Attributes
  • Ordering Notes

N-Channel 1500 V 4A (Tc) 160W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesPowerMESH™
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1500 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW4N150
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7