GQGF Electronics
EnglishEnglish
USD
STW56N65M2 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STW56N65M2

N-Channel 650 V 49A (Tc) 358W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW56N65M2
DescriptionN-Channel 650 V 49A (Tc) 358W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 10.74USD 10.74
10USD 10.3641USD 103.641
25USD 9.9882USD 249.705
100USD 9.6123USD 961.23
250USD 9.2364USD 2,309.10
500USD 8.8605USD 4,430.25
1,000USD 8.4846USD 8,484.60
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 49A (Tc) 358W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ M2
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs62mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs93 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 100 V
FET Feature-
Power Dissipation (Max)358W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW56
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7