GQGF Electronics
EnglishEnglish
USD
STW57N65M5 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STW57N65M5

N-Channel 650 V 42A (Tc) 250W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW57N65M5
DescriptionN-Channel 650 V 42A (Tc) 250W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 12.60USD 12.60
10USD 12.159USD 121.59
25USD 11.718USD 292.95
100USD 11.277USD 1,127.70
250USD 10.836USD 2,709.00
500USD 10.395USD 5,197.50
1,000USD 9.954USD 9,954.00
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 42A (Tc) 250W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ V
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs63mOhm @ 21A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 100 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW57
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7