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STW58N65DM2AG STMicroelectronics

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STMicroelectronics

STW58N65DM2AG

N-Channel 650 V 48A (Tc) 360W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW58N65DM2AG
DescriptionN-Channel 650 V 48A (Tc) 360W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 11.78USD 11.78
10USD 11.3677USD 113.677
25USD 10.9554USD 273.885
100USD 10.5431USD 1,054.31
250USD 10.1308USD 2,532.70
500USD 9.7185USD 4,859.25
1,000USD 9.3062USD 9,306.20
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 48A (Tc) 360W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 100 V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW58
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