GQGF Electronics
EnglishEnglish
USD
STW65N65DM2AG STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STW65N65DM2AG

N-Channel 650 V 60A (Tc) 446W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW65N65DM2AG
DescriptionN-Channel 650 V 60A (Tc) 446W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 11.24USD 11.24
10USD 10.8466USD 108.466
25USD 10.4532USD 261.33
100USD 10.0598USD 1,005.98
250USD 9.6664USD 2,416.60
500USD 9.273USD 4,636.50
1,000USD 8.8796USD 8,879.60
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 60A (Tc) 446W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 30A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds5500 pF @ 100 V
FET Feature-
Power Dissipation (Max)446W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW65
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7