GQGF Electronics
EnglishEnglish
USD
STW68N60M6 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STW68N60M6

N-Channel 600 V 63A (Tc) 390W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW68N60M6
DescriptionN-Channel 600 V 63A (Tc) 390W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 11.31USD 11.31
10USD 10.91415USD 109.1415
25USD 10.5183USD 262.9575
100USD 10.12245USD 1,012.245
250USD 9.7266USD 2,431.65
500USD 9.33075USD 4,665.375
1,000USD 8.9349USD 8,934.90
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 63A (Tc) 390W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ M6
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Rds On (Max) @ Id, Vgs41mOhm @ 31.5A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4360 pF @ 100 V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW68
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7