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STW69N65M5-4 STMicroelectronics

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STMicroelectronics

STW69N65M5-4

N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-4L

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW69N65M5-4
DescriptionN-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-4L
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 13.31USD 13.31
10USD 12.84415USD 128.4415
25USD 12.3783USD 309.4575
100USD 11.91245USD 1,191.245
250USD 11.4466USD 2,861.65
500USD 10.98075USD 5,490.375
1,000USD 10.5149USD 10,514.90
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-4L

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ V
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs45mOhm @ 29A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds6420 pF @ 100 V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
Base Product NumberSTW69
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