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STW75N65DM6-4 STMicroelectronics
STW75N65DM6-4 STMicroelectronics

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STMicroelectronics

STW75N65DM6-4

N-Channel 650 V 75A (Tc) 480W (Tc) Through Hole TO-247-4

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW75N65DM6-4
DescriptionN-Channel 650 V 75A (Tc) 480W (Tc) Through Hole TO-247-4
CategoryTransistors - FETs, MOSFETs - Single
DatasheetNot available
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 14.57USD 14.57
10USD 14.06005USD 140.6005
25USD 13.5501USD 338.7525
100USD 13.04015USD 1,304.015
250USD 12.5302USD 3,132.55
500USD 12.02025USD 6,010.125
1,000USD 11.5103USD 11,510.30
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 75A (Tc) 480W (Tc) Through Hole TO-247-4

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs36mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds5700 pF @ 100 V
FET Feature-
Power Dissipation (Max)480W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
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