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STY105NM50N STMicroelectronics

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STMicroelectronics

STY105NM50N

N-Channel 500 V 110A (Tc) 625W (Tc) Through Hole MAX247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTY105NM50N
DescriptionN-Channel 500 V 110A (Tc) 625W (Tc) Through Hole MAX247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 25.99USD 25.99
10USD 25.08035USD 250.8035
25USD 24.1707USD 604.2675
100USD 23.26105USD 2,326.105
250USD 22.3514USD 5,587.85
500USD 21.44175USD 10,720.875
1,000USD 20.5321USD 20,532.10
  • Product Attributes
  • Ordering Notes

N-Channel 500 V 110A (Tc) 625W (Tc) Through Hole MAX247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ II
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs22mOhm @ 52A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs326 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds9600 pF @ 100 V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageMAX247™
Package / CaseTO-247-3
Base Product NumberSTY105
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