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STY112N65M5 STMicroelectronics

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STMicroelectronics

STY112N65M5

N-Channel 650 V 96A (Tc) 625W (Tc) Through Hole MAX247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTY112N65M5
DescriptionN-Channel 650 V 96A (Tc) 625W (Tc) Through Hole MAX247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 38.05USD 38.05
10USD 36.71825USD 367.1825
25USD 35.3865USD 884.6625
100USD 34.05475USD 3,405.475
250USD 32.723USD 8,180.75
500USD 31.39125USD 15,695.625
1,000USD 30.0595USD 30,059.50
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 96A (Tc) 625W (Tc) Through Hole MAX247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ V
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs22mOhm @ 47A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs350 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds16870 pF @ 100 V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageMAX247™
Package / CaseTO-247-3
Base Product NumberSTY112
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