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STY139N65M5 STMicroelectronics

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STMicroelectronics

STY139N65M5

N-Channel 650 V 130A (Tc) 625W (Tc) Through Hole MAX247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTY139N65M5
DescriptionN-Channel 650 V 130A (Tc) 625W (Tc) Through Hole MAX247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 37.18USD 37.18
10USD 35.8787USD 358.787
25USD 34.5774USD 864.435
100USD 33.2761USD 3,327.61
250USD 31.9748USD 7,993.70
500USD 30.6735USD 15,336.75
1,000USD 29.3722USD 29,372.20
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 130A (Tc) 625W (Tc) Through Hole MAX247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ V
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs17mOhm @ 65A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs363 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds15600 pF @ 100 V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageMAX247™
Package / CaseTO-247-3
Base Product NumberSTY139
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