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ULN2069B STMicroelectronics

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STMicroelectronics

ULN2069B

Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Through Hole 16-PowerDIP (20x7.10)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Arrays
ManufacturerSTMicroelectronics
Manufacturer Product NumberULN2069B
DescriptionBipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Through Hole 16-PowerDIP (20x7.10)
CategoryTransistors - Bipolar (BJT) - Arrays
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 6.80USD 6.80
10USD 6.562USD 65.62
25USD 6.324USD 158.10
100USD 6.086USD 608.60
250USD 5.848USD 1,462.00
500USD 5.61USD 2,805.00
1,000USD 5.372USD 5,372.00
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Through Hole 16-PowerDIP (20x7.10)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
Transistor Type4 NPN Darlington (Quad)
Current - Collector (Ic) (Max)1.75A
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic1.5V @ 2.25mA, 1.5A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max1W
Frequency - Transition-
Operating Temperature-20°C ~ 85°C (TA)
Mounting TypeThrough Hole
Package / Case16-PowerDIP (0.300", 7.62mm)
Supplier Device Package16-PowerDIP (20x7.10)
Base Product NumberULN2069
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