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ULN2803A STMicroelectronics

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STMicroelectronics

ULN2803A

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Arrays
ManufacturerSTMicroelectronics
Manufacturer Product NumberULN2803A
DescriptionBipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP
CategoryTransistors - Bipolar (BJT) - Arrays
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.84USD 2.84
10USD 2.7406USD 27.406
25USD 2.6412USD 66.03
100USD 2.5418USD 254.18
250USD 2.4424USD 610.60
500USD 2.343USD 1,171.50
1,000USD 2.2436USD 2,243.60
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  • Ordering Notes

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
Transistor Type8 NPN Darlington
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 350mA, 2V
Power - Max2.25W
Frequency - Transition-
Operating Temperature-20°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Case18-DIP (0.300", 7.62mm)
Supplier Device Package18-DIP
Base Product NumberULN2803
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