GQGF Electronics
EnglishEnglish
USD
IRLD120 Vishay Siliconix

Image shown is a representation. Verify specifications with the product datasheet.

Vishay Siliconix

IRLD120

N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Manufacturer Product NumberIRLD120
DescriptionN-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrVishay Siliconix
Series-
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs270mOhm @ 780mA, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 5 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-HVMDIP
Package / Case4-DIP (0.300", 7.62mm)
Base Product NumberIRLD120
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7